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| High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor N-Channel, Enhancement Mode IXBH 40N140 IXBH 40N160 VCES IC25 VCE(sat) tfi TO-247 AD = = = = 1400/1600 V 33 A 6.2 V typ. 40 ns C G G C E E G = Gate, E = Emitter, C = Collector, TAB = Collector C (TAB) Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TL Md Weight Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 MW Continuous Transient TC = 25C, TC = 90C TC = 25C, 1 ms Maximum Ratings 40N140 40N160 1400 1400 1600 1600 20 30 33 20 40 ICM = 40 350 -55 ... +150 150 -55 ... +150 V V V V A A A A W C C C C Features * International standard package JEDEC TO-247 AD * High Voltage BIMOSFETTM - replaces high voltage Darlingtons and series connected MOSFETs - lower effective RDS(on) * Monolithic construction - high blocking voltage capability - very fast turn-off characteristics * MOS Gate turn-on - drive simplicity * Intrinsic diode Applications * * * * * AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies * CRT deflection * Lamp ballasts Advantages VGE = 15 V, TVJ = 125C, RG = 22 W VCE = 0.8*VCES Clamped inductive load, L = 100 mH TC = 25C 1.6 mm (0.063 in) from case for 10 s Mounting torque 300 1.15/10 Nm/lb.in. 6 g Symbol Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 40N140 40N160 1400 1600 4 TJ = 25C TJ = 125C 8 400 3 500 6.2 TJ = 125C 7.1 7.8 V V V mA mA nA V V BVCES VGE(th) ICES IGES VCE(sat) IC IC = 1 mA, VGE = 0 V = 2 mA, VCE = VGE * Easy to mount with 1 screw (isolated mounting screw hole) * Space savings * High power density VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V IXYS reserves the right to change limits, test conditions and dimensions. (c) 2000 IXYS All rights reserved 1-4 031 IXBH 40N140 IXBH 40N160 Symbol Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 3300 VCE = 25 V, VGE = 0 V, f = 1 MHz IC = 20 A, VCE = 600 V, VGE = 15 V Inductive load, TJ = 125C IC = IC90, VGE = 15 V, L = 100 mH, VCE = 960 V, RG = 22 W 220 30 130 200 60 270 40 pF pF pF nC ns ns ns ns 0.35 K/W 0.25 K/W Dim. Millimeter Min. Max. A B C D 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102 TO-247 AD Outline Cies Coes Cres Qg td(on) tri td(off) tfi RthJC RthCK Reverse Conduction Characteristic Values (TJ = 25C, unless otherwise specified) Conditions min. typ. 2.5 max. 5 V E F G H J K L M N Symbol VF IF = IC90, VGE = 0 V, Pulse test, t 300 ms, duty cycle d 2 % 1.5 2.49 (c) 2000 IXYS All rights reserved 2-4 IXBH 40N140 IXBH 40N160 70 TJ = 25C VGE = 17V 15V 70 TJ = 125C VGE = 17V 15V 60 60 IC - Amperes IC - Amperes 50 40 30 20 10 0 0 2 4 6 8 10 12 14 13V 50 40 30 20 10 0 13V 16 18 0 2 4 6 8 10 12 14 16 18 VCE - Volts VCE - Volts Fig. 1 Typ. Output Characteristics 70 VCE = 20V Fig. 2 Typ. Output Characteristics 70 60 60 IC - Amperes IF - Amperes 50 40 TJ = 125C TJ = 25C 50 40 30 TJ = 25C TJ = 125C 30 20 10 0 5 6 7 8 9 10 11 12 13 20 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGE - Volts VF - Volts Fig. 3 Typ. Transfer Characteristics Fig. 4 Typ. Characteristics of Reverse Conduction 100 16 14 12 VCE = 600V IC = 20A ICM - Amperes VGE - Volts 10 8 6 4 2 0 0 20 40 60 80 100 120 140 10 TJ = 125C VCEK < VCES 1 IXBH 40N140 IXBH 40N160 0.1 0 400 800 1200 1600 QG - nanocoulombs VCE - Volts Fig. 5 Typ. Gate Charge characteristics Fig. 6 Reverse Based Safe Operating Area RBSOA (c) 2000 IXYS All rights reserved 3-4 IXBH 40N140 IXBH 40N160 50 400 VCE = 960V VGE = 15V td(off) - nanoseconds tfi - nanoseconds 40 RG = 22W TJ = 125C 300 VCE = 960V VGE = 15V IC = 20A TJ = 125C 30 20 10 0 0 10 20 30 40 200 100 0 0 10 20 30 40 IC - Amperes RG - Ohms Fig. 7 Typ. Fall Time 1 Fig. 8 Typ. Turn Off Delay Time 0.1 ZthJC - K/W 0.01 Single Pulse 0.001 0.0001 0.00001 IXBH40 0.0001 0.001 0.01 0.1 1 Pulse Width - Seconds Fig. 9 Typ. Transient Thermal Impedance (c) 2000 IXYS All rights reserved 4-4 |
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